ST(B,D)6N62K3 دیتاشیت

ST(B,D)6N62K3

مشخصات دیتاشیت

نام دیتاشیت ST(B,D)6N62K3
حجم فایل 430.481 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت ST(B,D)6N62K3

دانلود دیتاشیت

سایر مستندات

STD6N62K3 19 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD6N62K3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 90W
  • Total Gate Charge (Qg@Vgs): 25.7nC@10V
  • Drain Source Voltage (Vdss): 620V
  • Input Capacitance (Ciss@Vds): 706pF@50V
  • Continuous Drain Current (Id): 5.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
  • Reverse Transfer Capacitance (Crss@Vds): 17pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@10V,2.8A
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.28Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 706pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD6N
  • detail: N-Channel 620V 5.5A (Tc) 90W (Tc) Surface Mount DPAK

محصولات مشابه